2SB1440-S 11S 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
-50V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
?50V |
| 集电极连续输出电流IC
Collector Current(IC) |
-2A |
| 截止频率fT
Transtion Frequency(fT) |
80MHz |
| 直流电流增益hFE
DC Current Gain(hFE) |
170~340 |
| 管压降VCE（sat）
Collector-Emitter SaturationVoltage |
-300mV/-0.3V |
| 耗散功率Pc
PoWer Dissipation |
1W |
| Description & Applications |
PNP Silicon epitaxial planar transistor For low-frequency output amplification Complementary to 2SD2185 Features 1)Low collector to emitter saturation voltage 2)Mini Power type package |
| 描述与应用 |
PNP硅外延平面晶体管 对于低频输出放大 补充型2SD2185 特点 1）低集电极到发射极饱和电压 2）小功率型封装 |
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