2SB1669(O)-Z-E1 B1669 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
-60V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
?60V |
| 集电极连续输出电流IC
Collector Current(IC) |
-3A |
| 截止频率fT
Transtion Frequency(fT) |
5MHz |
| 直流电流增益hFE
DC Current Gain(hFE) |
100~400 |
| 管压降VCE（sat）
Collector-Emitter SaturationVoltage |
-1000mV/-1V |
| 耗散功率Pc
PoWer Dissipation |
1.5W |
| Description & Applications |
PNP Silicon epitaxial planar transistor FOR HIGH-SPEED SWITCHING The 2SB1669 is a power transistor that can be directly driven from the output of an IC. This transistor is ideal for OA and FA equipment such as motor and solenoid drivers. Features High DC current amplifier rate Z type available for surface mounting supported prodcuts |
| 描述与应用 |
PNP硅外延平面晶体管 高速开关 2SB1669是可以直接从驱动的IC的输出的功率晶体管。这种晶体管是OA和FA设备如电机和电磁驱动理想。 特点 高直流电流放大器率 Z型表面安装支持的产品系列 |
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