2SC3648T cdt 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
180V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
160V |
| 集电极连续输出电流IC
Collector Current(IC) |
700mA/0.7A |
| 截止频率fT
Transtion Frequency(fT) |
120MHz |
| 直流电流增益hFE
DC Current Gain(hFE) |
200~400 |
| 管压降VCE（sat）
Collector-Emitter Saturation Voltage |
400mV/0.4V |
| 耗散功率Pc
Power Dissipation |
500mW/0.5W |
| Description & Applications |
NPN epitaxial planar Silicon Transistors High-Voltage Switching, predriver applications High breakdown voltage and large current capacity Fast switching speed Very small size making it easy to provide high-density. Complementary to 2SA1418 |
| 描述与应用 |
NPN外延平面硅晶体管 高电压开关，前置驱动器应用 高击穿电压和大电流的能力 开关速度快 非常小的尺寸使其易于提供高密度。 互补型2SA1418 |
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