2SC5216 FB 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
15V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
8V |
| 集电极连续输出电流IC
Collector Current(IC) |
50mA |
| 截止频率fT
Transtion Frequency(fT) |
1.3GHz |
| 直流电流增益hFE
DC Current Gain(hFE) |
100~350 |
| 管压降VCE（sat）
Collector-Emitter Saturation Voltage |
<500mV/0.5V |
| 耗散功率Pc
Power Dissipation |
200mW/0.2W |
| Description & Applications |
Silicon NPN epitaxial planer type For high-frequency amplification/oscillation/mixing Features *High transition frequency fT. *Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing |
| 描述与应用 |
NPN硅外延平面型 对于高频放大/振荡/混合 ?特点 *高转换频率FT。 *迷你型包装，使瘦身的设备和 通过自动插入磁带包装和杂志 填料 |
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