2SC5938a 9B 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
50V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
12V |
| 集电极连续输出电流IC
Collector Current(IC) |
200mA/0.2A |
| 截止频率fT
Transtion Frequency(fT) |
30MHz |
| 直流电流增益hFE
DC Current Gain(hFE) |
200~700 |
| 管压降VCE（sat）
Collector-Emitter Saturation Voltage |
30mV |
| 耗散功率Pc
Power Dissipation |
150mW/0.15W |
| Description & Applications |
SMALL-SIGNAL TRANSISTOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION ISAHAYA 2SC5938 is a super mini package resin sealed silicon NPN epitaxial transistor for muting and switching application FEATURE ?Small packege for mounting ?High Emitter to Base voltage VEBO=50V ?High Reverse hFE ?Low ON RESISTANCE. RON=1Ω APPLICATION For muting, switching application |
| 描述与应用 |
小信号晶体管 低频率AMPLIFY应用 硅NPN外延型 说明 谏早2SC5938是一个超小型封装树脂密封 NPN硅外延晶体管静音和开关应用 特写 ·安装小装量 ·高发射器基极电压VEBO= 50V ·高反向HFE ·低导通电阻。 RON=1Ω 应用 静音，切换应用程序 |
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