2SK1961 K1961 的参数 |
| 最大源漏极电压Vds
Drain-Source Voltage |
15v |
| 栅源极击穿电压V(BR)GS
Gate-Source Voltage |
-15v |
| 漏极电流(Vgs=0V)IDSS
Drain Current |
40~75ma |
| 关断电压Vgs(off)
Gate-Source Cut-off Voltage |
-1.2~-4.5v |
| 耗散功率Pd
Power Dissipation |
500mW/0.5W |
| Description & Applications |
Silicon N-Channel Junction FET Applications High-frequency low-noise amp applications Features Adoption of FBET process Very low noise figure |
| 描述与应用 |
硅N沟道结型场效应晶体管应用 高频低噪声放大器的应用 特点 采纳FBET过程 非常低的噪声图 |
| 技术文档PDF下载 |
在线阅读  |
