2SK2593JPL 2BP 的参数 |
| 最大源漏极电压Vds
Drain-Source Voltage |
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| 最大栅源极电压Vgs(±)
Gate-Source Voltage |
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| 最大漏极电流Id
Drain Current |
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| 源漏极导通电阻ΩRds
DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance |
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| 开启电压Vgs（th）
Gate-Source Threshold Voltage |
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| 耗散功率Pd
Power Dissipation |
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| Description & Applications |
Silicon Junction FETs (Small Signal) Silicon N-Channel Junction FET For low-frequency amplification For switching Features Silicon N-Channel Junction FET For low-frequency amplification For switching Low noise, high gain High gate to drain voltage VGDO Mini-type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing |
| 描述与应用 |
硅结场效应晶体管（小信号） 硅N沟道结型场效应管 对于开关的低频放大 特性 硅N沟道结型场效应管 用于低频放大 用于开关 低噪声，高增益 高栅漏电压VGDO 迷你型包装，让瘦身套和通过自动插入磁带/盒包装 |
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