2SK3503-T1 E1 的参数 |
| 最大源漏极电压Vds
Drain-Source Voltage |
16V |
| 最大栅源极电压Vgs(±)
Gate-Source Voltage |
7V |
| 最大漏极电流Id
Drain Current |
100mA/0.1A |
| 源漏极导通电阻ΩRds
DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance |
0.005Ω/Ohm @10mA,4V |
| 开启电压Vgs（th）
Gate-Source Threshold Voltage |
0.5-1.1V |
| 耗散功率Pd
Power Dissipation |
200mW/0.2W |
| Description & Applications |
MOS FIELD EFFECT TRANSISTOR N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING DESCRIPTION The 2SK3503 is an N-channel vertical MOS FET. Because it can be driven by a voltage as low as 1.5 V and it is not necessary to consider a drive current, this FET is ideal as an actuator for low-current portable systems such as headphone stereos and video cameras. Features N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING Automatic mounting supported Gate can be driven by a 1.5 V power source Because of its high input impedance, there’s no need to consider a drive current Since bias resistance can be omitted, the number of components required can be reduced |
| 描述与应用 |
MOS场效应晶体管 N沟道MOS场效应晶体管 用于高速开关 说明 2SK3503一个N沟道垂直MOS FET。因为它 可以由低至1.5 V的电压，这是不 必要考虑驱动电流，这FET是理想的作为 执行器的低电流的便携式系统，如耳机 音响和摄像机。 特性 N沟道MOS场效应晶体管 用于高速开关 支持自动安装 门可以由一个1.5 V电源 由于其高输入阻抗，有没有需要考虑的驱动电流 由于偏置电阻可以省略，可以减少所需的部件数量 |
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