2SK368-y KAY 的参数 |
| 最大源漏极电压Vds
Drain-Source Voltage |
100v |
| 栅源极击穿电压V(BR)GS
Gate-Source Voltage |
-100v |
| 漏极电流(Vgs=0V)IDSS
Drain Current |
1.2~3ma |
| 关断电压Vgs(off)
Gate-Source Cut-off Voltage |
-0.4~-3.5v |
| 耗散功率Pd
Power Dissipation |
150mW/0.15W |
| Description & Applications |
?Silicon N-Channel Junction FET Audio Frequency and High Voltage Amplifier Applications Constant Current Applications ? High breakdown voltage: VGDS = ?100 V (min) ? High input impedance: IGSS = ?1.0 nA (max) (VGS = ?80 V) ? Small package |
| 描述与应用 |
?硅N沟道结型场效应管 音频频率和高电压放大器的应用 恒流应用 ?高击穿，电压：VGDS= -100 V（分钟） ?高输入阻抗：IGSS= -1.0 NA（最大值）（VGS=-80 V） ?小型封装 |
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