2SK879-GR JG 的参数 |
| 最大源漏极电压Vds
Drain-Source Voltage |
50v |
| 栅源极击穿电压V(BR)GS
Gate-Source Voltage |
-50v |
| 漏极电流(Vgs=0V)IDSS
Drain Current |
2.6~6.5ma |
| 关断电压Vgs(off)
Gate-Source Cut-off Voltage |
-0.4~-5v |
| 耗散功率Pd
Power Dissipation |
100mW/0.1W |
| Description & Applications |
?Field Effect Transistor Silicon N Channel Junction Type ?General Purpose and Impedance Converter and Condenser Microphone Applications ?High breakdown voltage: VGDS = ?50 V ? High input impedance: IGSS = ?1.0 nA (max) (VGS = ?30 V) ? Low noise: NF = 0.5dB (typ.) (RG = 100 k?, f = 120 Hz) |
| 描述与应用 |
?场效应晶体管的硅N沟道结型 ?通用和阻抗转换器和 电容式麦克风应用 ?高击穿电压：VGDS=-50 V ?高输入阻抗：IGSS= -1.0 NA（最大值）（VGS=-30 V） ?低噪音：NF=0.5分贝（典型值）（RG=100kΩ的，F =120赫兹） |
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