AO6702L G2L 的参数 |
| MOSFET 类型
Type |
N沟道 N-Channel |
| 最大源漏极电压Vds
Drain-Source Voltage |
20V |
| 最大栅源极电压Vgs(±)
Gate-Source Voltage |
8V |
| 最大漏极电流Id
Drain Current |
3.8A |
| 源漏极导通电阻Rds(on)
Drain-Source On-State Resistance |
50m?@ VGS = 4.5V, ID =3.8A |
| 开启电压Vgs（th）
Gate-Source Threshold Voltage |
0.4~~1V |
| DIODE 类型
Type |
肖特基二极管SBD Schottky Barrier Diodes |
| 反向电压Vr
Reverse Voltage |
20V |
| 平均整流电流Io
Average Rectified Current |
2A |
| 最大正向压降VF
Forward Voltage(Vf) |
0.39V@IF=0.5A |
| 耗散功率Pd
Power Dissipation |
1.15W |
| Description & Applications |
N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description The AO6702 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. A Schottky diode is provided to facilitate the implementation of a bidirectional blocking switch, or for DC-DC conversion applications. Standard Product AO6702 is Pb-free (meets ROHS & Sony 259 specifications). AO6702L is a Green Product ordering option. AO6702 and AO6702L are electrically identical |
| 描述与应用 |
N沟道增强型场效应晶体管与肖特基二极管 概述 AO6702采用先进沟道技术，提供优良的R DS（ON）和栅极电荷低。肖特基二极管提供便利实施双向无阻塞交换，或DC-DC转换器应用。标准产品AO6702是无铅（符合ROHS＆索尼259规格）。 AO6702L是一种绿色产品订购选项。 AO6702和AO6702L电相同的 |
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