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AP9916H 9916H 的参数 |
| 最大源漏极电压Vds
Drain-Source Voltage |
18V |
| 最大栅源极电压Vgs(±)
Gate-Source Voltage |
12V |
| 最大漏极电流Id
Drain Current |
3.5A |
| 源漏极导通电阻ΩRds
DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance |
0.025Ω/Ohm,@6A,4.5V |
| 开启电压Vgs（th）
Gate-Source Threshold Voltage |
0.5-1V |
| 耗散功率Pd
Power Dissipation |
50W |
| Description & Applications |
Advanced Power N-CHANNEL ENHANCEMENT MODE POWER MOSFET The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP70T03GJ) are available for low-profile applications. |
| 描述与应用 |
高级电源 N沟道增强模式 功率MOSFET 先进的功率MOSFET提供从APEC 设计师与快速切换的最佳组合， 坚固耐用的设备设计，低导通电阻和成本效益。 该TO-252包装普遍首选的所有commercialindustrial表面贴装应用，适用于低电压 诸如DC/ DC转换器的应用程序。通孔版本（AP70T03GJ）可用于低配置应用程序 |
| 技术文档PDF下载 |
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相关型号列表 |
| 型号 |
标记/丝印/代码 |
厂家 |
批号 |
封装 |
数量 |
描述 |
详细资料 |
| AP9916H |
9916H |
RALTR |
05+ |
TO-252/D-PAK |
195 |
场效应管FET-MOSFET-N沟道MOSFET N-Channel |
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