BCP69T1 CE 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
?25V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
?20V |
| 集电极连续输出电流IC
Collector Current(IC) |
-1A |
| 截止频率fT
Transtion Frequency(fT) |
60MHz |
| 直流电流增益hFE
DC Current Gain(hFE) |
85~375 |
| 管压降VCE（sat）
Collector-Emitter SaturationVoltage |
?500mV/-0.5V |
| 耗散功率Pc
PoWer Dissipation |
1.5W |
| Description & Applications |
PNP Silicon Epitaxial Transistor Features ? High Current: IC = ?1.0 A ? The SOT?223 Package can be soldered using wave or reflow. ? SOT?223 package ensures level mounting, resulting in improved thermal conduction, and allows visual inspection of soldered joints. The formed leads absorb thermal stress during soldering, eliminating the possibility of damage to the die. ? NPN Complement is BCP68 ? Pb?Free Package is Available |
| 描述与应用 |
PNP硅外延晶体管 特点 ?高电流：IC=-1.0 A ?SOT-223包装可以使用波或回流焊接。 ?SOT-223包装保证水平安装，从而提高热传导，并允许目视检查焊点。所形成的线索在焊接热应力吸收，消除模具损坏的可能性。 ?NPN补BCP68 ?无铅包装是可用 |
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