BCW67CTA DC 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
-25V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
?20V |
| 集电极连续输出电流IC
Collector Current(IC) |
-1A |
| 截止频率fT
Transtion Frequency(fT) |
100MHz |
| 直流电流增益hFE
DC Current Gain(hFE) |
160~400 |
| 管压降VCE（sat）
Collector-Emitter SaturationVoltage |
?500mV/-0.5V |
| 耗散功率Pc
PoWer Dissipation |
1W |
| Description & Applications |
20V NPN SILICON PLANAR MEDIUM POWER TRANSISTOR Features ? BVCEO > 20V ? High current capability Maximum Continuous Current IC = 1A ? Low saturation voltage VCE(sat) < 500mV @ 1A ? Complementary PNP type: BCX69 ? Lead Free, RoHS Compliant (Note 1) ? Halogen and Antimony Free, “Green” Device (Note 2) ? Qualified to AEC-Q101 Standards for High Reliability Application ? Power MOSFET gate driving ? Low loss power switching |
| 描述与应用 |
中等功率硅NPN20V平面晶体管 特点 ?BVCEO> 20V ?高电流能力最大连续电流IC= 1A ?低饱和电压VCE（sat）<500mV的@1A ?互补PNP类型：BCX69 应用 ?功率MOSFET栅极驱动 ?损耗低功率开关 |
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