BF904R M06 的参数 |
| 最大源漏极电压Vds
Drain-Source Voltage |
7V |
| 最大栅源极电压Vgs(±)
Gate-Source Voltage |
|
| 最大漏极电流Id
Drain Current |
30mA |
| 源漏极导通电阻ΩRds
DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance |
|
| 开启电压Vgs（th）
Gate-Source Threshold Voltage |
0.3~1.2V |
| 耗散功率Pd
Power Dissipation |
200mW/0.2W |
| Description & Applications |
N-channel dual gate MOS-FETs VHF and UHF applications with 3 to 7 V supply voltage such as television tuners and professional communications equipment. FEATURES ? Specially designed for use at 5 V supply voltage ? Short channel transistor with high transfer admittance to input capacitance ratio ? Low noise gain controlled amplifier up to 1 GHz ? Superior cross-modulation performance during AGC. APPLICATIONS ? VHF and UHF applications with 3 to 7 V supply voltage such as television tuners and professional communications equipment. DESCRIPTION Enhancement type field-effect transistor in a plastic microminiature SOT143B and SOT143R package. The transistor consists of an amplifier MOS-FET with source. |
| 描述与应用 |
N沟道双栅MOS场效应管 VHF和UHF的应用3到7 V电源电压 诸如电视调谐器和专业的通信设备 特点 ?专为使用5 V电源电压 ?短沟道晶体管的输入电容比具有高传输导纳 ?低噪声增益控制放大器高达1 GHz ?高级交叉调制性能在AGC。 应用 ?VHF和UHF具有3至7 V电源电压，例如电视调谐器和专业的通信设备的应用程序。 说明 增强型场效应晶体管在一个塑料的超小型的SOT143B SOT143R包。该晶体管包括一个放大器的MOS-FET的源。 |
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