BFT25 V1 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
8V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
5V |
| 集电极连续输出电流IC
Collector Current(IC) |
6.5mA |
| 截止频率fT
Transtion Frequency(fT) |
2.3GHz |
| 直流电流增益hFE
DC Current Gain(hFE) |
40 |
| 管压降VCE（sat）
Collector-Emitter Saturation Voltage |
|
| 耗散功率Pc
Power Dissipation |
30mW |
| Description & Applications |
NPN 2 GHz wideband transistor DESCRIPTION NPN transistor in a plastic SOT23 envelope. It is primarily intended for use in RF low power amplifiers, such as in pocket phones, paging systems, etc.The transistor features low current consumption (100 uA to 1 mA); due to its high transition frequency, it also has excellent wideband properties and low noise up to high frequencies. |
| 描述与应用 |
2 GHz的宽带晶体管NPN 说明 NPN晶体管在一个塑料SOT23信封。 它的主要目的是利用低功耗射频放大器，如在口袋里的手机，传呼系统等。晶体管具有低电流消耗（100uA到1 mA），由于其高转换频率，它还具有优异的宽带性能和低噪声高频率。 |
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