CMPT5179TR C7H 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
20V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
12V |
| 集电极连续输出电流IC
Collector Current(IC) |
50mA |
| 截止频率fT
Transtion Frequency(fT) |
1.45GHz |
| 直流电流增益hFE
DC Current Gain(hFE) |
25 |
| 管压降VCE（sat）
Collector-Emitter Saturation Voltage |
400mV/0.4V |
| 耗散功率Pc
Power Dissipation |
350mW/0.35W |
| Description & Applications |
NPN SILICON RF TRANSISTOR The CENTRAL SEMICONDUCTOR CMPT5179 type is an NPN silicon RF transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package,designed for low noise, high frequency amplifier and high output oscillator applications. |
| 描述与应用 |
NPN硅RF晶体管 中央的半导体CMPT5179类型是NPN硅RF晶体管 由外延平面工艺制造，环氧树脂成型的表面贴装封装，专为低噪音，高频率放大器和高输出振荡器 的应用程序。 |
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