CPH6702 PB 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
-15V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
-15V |
| 集电极连续输出电流IC
Collector Current(IC) |
-1.5A |
| Q1基极输入电阻R1
Input Resistance(R1) |
350MHz |
| Q1基极-发射极输入电阻R2
Base-Emitter Resistance(R2) |
200~560 |
| Q1电阻比(R1/R2)
Q1 Resistance Ratio |
-120mV |
| Q2基极输入电阻R1
Input Resistance(R1) |
1300mW |
| Q2基极-发射极输入电阻R2
Base-Emitter Resistance(R2) |
Features ? PNP Epitaxial Planar Silicon Transistor ? DC/DC Converter Applications ? Composite type with a PNP transistor and a Schottky barrier diode contained in one package facilitating high-density mounting. ? The CPH6702 consists of two chips which are equivalent to the CPH3114 and the SBS006, respectively. ? Ultrasmall-sized package permitting applied sets to be made small and slim (mounting height 0.9mm). |
| Q2电阻比(R1/R2)
Q2 Resistance Ratio |
特点 ?PNP平面外延硅晶体管 ?DC / DC转换器应用 ?复合型与PNP晶体管和肖特基包含在一个包装促进垒二极管高密度安装。 ?CPH6702由两个芯片相当于CPH3114和SBS006，分别为。 ?超小尺寸封装，允许应用套和苗条的小（安装高度0.9毫米） |
| 直流电流增益hFE
DC Current Gain(hFE) |
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| 截止频率fT
Transtion Frequency(fT) |
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| 耗散功率Pc
Power Dissipation |
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| Description & Applications |
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| 描述与应用 |
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| 技术文档PDF下载 |
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