CXT2222A CXT2222A 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
75V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
40V |
| 集电极连续输出电流IC
Collector Current(IC) |
600mA/0.6A |
| 截止频率fT
Transtion Frequency(fT) |
300MHz |
| 直流电流增益hFE
DC Current Gain(hFE) |
100~300 |
| 管压降VCE（sat）
Collector-Emitter Saturation Voltage |
1V |
| 耗散功率Pc
Power Dissipation |
1.2W |
| Description & Applications |
SURFACE MOUNT NPN SILICON TRANSISTOR The CENTRAL SEMICONDUCTOR CZT2222A type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package,designed for general purpose amplifier and switching applications. |
| 描述与应用 |
表面贴装 NPN硅晶体管 该中央半导体CZT2222A的类型是NPN硅晶体管 由外延平面工艺，环氧树脂模压在一个表面贴装封装，为通用放大器和开关应用而设计制造。 |
| 技术文档PDF下载 |
在线阅读  |
