FC150 150 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
-30V/60V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
-25V/50V |
| 集电极连续输出电流IC
Collector Current(IC) |
-150mA/100mA |
| 截止频率fT
Transtion Frequency(fT) |
210MHz/200MHz |
| 直流电流增益hFE
DC Current Gain(hFE) |
800/1500 |
| 管压降VCE（sat）
Collector-Emitter Saturation Voltage |
-150mV/100mV |
| 耗散功率Pc
Power Dissipation |
300mW |
| Description & Applications |
Features ? PNP/NPN Epitaxial Planar Silicon Composite Transistor ? Low-Frequency General-Purpose Amp, Driver Applications ? Composite type with 2 transistors contained in the CP package currently in use, improving the mounting efficiency greatly. ? The FC150 is formed with two chips, being equivalent to the 2SA1813/2SC4413, placed in one package. ? Adoption of FBET process. ? High DC current gain. ? Hgih VEBO. |
| 描述与应用 |
特点 ?PNP/ NPN平面外延硅复合晶体管 ?低频通用放大器，驱动器应用 ?复合型中包含2个晶体管CP包装目前在使用，大大提高了安装效率。 ?FC150两个芯片组成，相当于2SA1813/2SC4413，放置在一个包装。 ?通过过程FBET。 ?高直流电流增益。 ?Hgih VEBO。 |
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