FDC6321C 321 的参数 |
| 最大源漏极电压Vds
Drain-Source Voltage |
-20V |
| 最大栅源极电压Vgs(±)
Gate-Source Voltage |
-8V |
| 最大漏极电流Id
Drain Current |
-2.3A |
| 源漏极导通电阻Rds
Drain-Source On-State Resistance |
225m?@ VGS = -1.8V, ID = -1.6A |
| 开启电压Vgs（th）
Gate-Source Threshold Voltage |
-0.4~-1.5V |
| 耗散功率Pd
Power Dissipation |
960mW/0.96W |
| Description & Applications |
Dual P-Channel 1.8V PowerTrench Specified MOSFET General Description These P-Channel 1.8V specified MOSFETs are produced using Fairchild Semiconductor's advanced Power Trench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. Applications ? Power management ? Load switch Features ? High performance trench technology for extremely low RDS(ON) ? Super SOTTM -6 package: small footprint |
| 描述与应用 |
双P沟道1.8V指定的PowerTrench MOSFET 概述 这些P沟道1.8V指定MOSFET采用飞兆半导体先进的功率沟槽进程，已特别定制生产 尽量减少对通态电阻和出色的开关性能但为保持低栅极电荷。 应用 ?电源管理 ?负荷开关 特点 ?高性能沟道技术极低的RDS（ON） ?超级SOTTM-6包装：占地面积小 |
| 技术文档PDF下载 |
在线阅读  |
