FDC637AN 637 的参数 |
| 最大源漏极电压Vds
Drain-Source Voltage |
20V |
| 最大栅源极电压Vgs(±)
Gate-Source Voltage |
8V |
| 最大漏极电流Id
Drain Current |
6.2A |
| 源漏极导通电阻ΩRds
DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance |
32m?@ VGS = 2.5V, ID =5.2A |
| 开启电压Vgs（th）
Gate-Source Threshold Voltage |
0.4~1.5V |
| 耗散功率Pd
Power Dissipation |
1.6W |
| Description & Applications |
Single N-Channel, 2.5V Specified Power Trench MOSFET General Description This N-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced Power Trench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint compared with bigger SO-8 and TSSOP-8 packages. Applications ? DC/DC converter ? Load switch ? Battery Protection Features ? Fast switching speed. ? Low gate charge. ? High performance trench technology for extremely low RDS(ON) ? Super SOT TM-6 package |
| 描述与应用 |
单N沟道，2.5V额定功率沟槽MOSFET 概述 此N沟道2.5V指定的MOSFET的生产采用飞兆半导体先进的功率沟槽进程，已特别是针对减少通态电阻，但维持出色的开关性能低栅极电荷。 这些设备已设计提供特殊功耗在一个非常小的空间，更大的SO-8和TSSOP-8封装相比。 应用 ?DC/ DC转换器 ?负荷开关 ?电池保护 特点 ?快速开关速度。 ?低栅极电荷。 ?高性能沟道技术极低的RDS（ON） ?超级SOT TM-6封装 |
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