FDC6392S 392 的参数 |
| MOSFET 类型
Type |
P沟道 P-Channel |
| 最大源漏极电压Vds
Drain-Source Voltage |
-20V |
| 最大栅源极电压Vgs(±)
Gate-Source Voltage |
-12V |
| 最大漏极电流Id
Drain Current |
-2.2A |
| 源漏极导通电阻Rds(on)
Drain-Source On-State Resistance |
150m?@ VGS =4.5 V, ID =2.2A |
| 开启电压Vgs（th）
Gate-Source Threshold Voltage |
-0.6~-1.5V |
| DIODE 类型
Type |
肖特基二极管SBD Schottky Barrier Diodes |
| 反向电压Vr
Reverse Voltage |
20V |
| 平均整流电流Io
Average Rectified Current |
1A |
| 最大正向压降VF
Forward Voltage(Vf) |
0.34V@IF=500mA |
| 耗散功率Pd
Power Dissipation |
700mW/0.7W |
| Description & Applications |
20V Integrated P-Channel Power Trench MOSFET and Schottky Diode General Description The FDC6392S combines the exceptional performance of Fairchild's PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an SSOT-6 package. This device is designed specifically as a single package solution for DC to DC converters. It features a fast switching, low gate charge MOSFET with very low onstate resistance. The independently connected Schottky diode allows its use in a variety of DC/DC converter topologies. Features Low Gate Charge Compact industry standard Super SOT-6 package |
| 描述与应用 |
集成的20V P沟道功率沟道MOSFET和肖特基二极管 概述 FDC6392S结合飞兆半导体的PowerTrench MOSFET技术，卓越的性能非常低正向压降肖特基势垒整流器SSOT-6封装。此设备是专门为一个单一封装解决方案，直流到直流转换器。它具有快速开关，低栅极电荷MOSFET具有极低的通态电阻。独立连接的肖特基二极管允许其使用的DC / DC转换器拓扑结构中的各种。 特点 低栅极电荷 超级紧凑型工业标准SOT-6封装 |
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