FDC655AN 55A 的参数 |
| 最大源漏极电压Vds
Drain-Source Voltage |
50V |
| 最大栅源极电压Vgs(±)
Gate-Source Voltage |
20V |
| 最大漏极电流Id
Drain Current |
6.3A |
| 源漏极导通电阻ΩRds
DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance |
0.035Ω/Ohm @6.3A,10V |
| 开启电压Vgs（th）
Gate-Source Threshold Voltage |
1.2V |
| 耗散功率Pd
Power Dissipation |
1.6W |
| Description & Applications |
Single N-Channel, Logic Level, PowerTrench TM MOSFET General Description This N-Channel Logic LevelMOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications whe 6.3 A, 30 V. RDS(ON) = 0.027 W @ VGS= 10 V RDS(ON) = 0.035 W @ VGS= 4.5 V. Fast switching. Low gate charge ( typical 9 nC). SuperSOT TM-6 package: small footprint (72% smaller than SO-8); low p |
| 描述与应用 |
单N沟道逻辑电平，TM的PowerTrench MOSFET 概述 这N沟道逻辑电平MOSFET的生产采用 飞兆半导体先进的PowerTrench进程，已特别是针对减少通态电阻，同时保持出色的开关性能。 这些器件非常适合于低电压和电池供电应用的磨片 ?开关速度快 ?高性能沟道技术极 低RDS（ON） ?高功率和电流处理能力 |
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