FDG312P 12 的参数 |
| 最大源漏极电压Vds
Drain-Source Voltage |
-20V |
| 最大栅源极电压Vgs(±)
Gate-Source Voltage |
-8V |
| 最大漏极电流Id
Drain Current |
-1.2A |
| 源漏极导通电阻Rds
Drain-Source On-State
Resistance |
250m?@ VGS = -2.5V, ID = -1A |
| 开启电压Vgs（th）
Gate-Source Threshold Voltage |
-0.4~-1.5V |
| 耗散功率Pd
Power Dissipation |
750mW/0.75W |
| Description & Applications |
P-Channel 2.5V Specified Power Trench MOSFET General Description This P-Channel MOSFET is produced using Fairchild Semiconductor's advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for portable electronics applications. Applications ? Load switch ? Power management ? DC/DC converter Features ? Low gate charge. ? High performance trench technology for extremely low RDS(ON). ? Compact industry standard SC70-6 surface mount package. |
| 描述与应用 |
P沟道2.5V额定功率沟道MOSFET 概述 P沟道MOSFET采用飞兆半导体先进的功率沟槽进程，已特别是针对减少通态电阻，同时保持出色的开关性能低栅极电荷。这些器件非常适合用于便携式电子产品应用。 应用 ?负荷开关 ?电源管理 ?DC/ DC转换器 特点 ?低栅极电荷。 ?高性能沟道技术极低的RDS（ON）。 ?紧凑型工业标准SC70-6表面贴装封装。 |
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