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FDG313N 13 的参数 |
| 最大源漏极电压Vds
Drain-Source Voltage |
25V |
| 最大栅源极电压Vgs(±)
Gate-Source Voltage |
8V |
| 最大漏极电流Id
Drain Current |
950mA/0.95A |
| 源漏极导通电阻ΩRds
DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance |
0.45Ω/Ohm @500mA,4.5V |
| 开启电压Vgs（th）
Gate-Source Threshold Voltage |
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| 耗散功率Pd
Power Dissipation |
750mW/0.75W |
| Description & Applications |
Digital FET, N-Channel General Description This N-Channel enhancement mode field effect transistor is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistor and small signal MOSFET. Features ? 0.95 A, 25 V. R DS(on)= 0.45 ? @ V GS = 4.5 V R DS(on)= 0.60 ? @ V GS = 2.7 V. ? Low gate charge (1.64 nC typical) ? Very low level gate drive requirements allowing direct operation in 3V circuits (VGS(th) < 1.5V). ? Gate-Source Zener for ESD ruggedness (>6kV Human Body Model). ? Compact industry standard SC70-6 surface mount package. |
| 描述与应用 |
数字FET，N沟道 概述 这N沟道增强型场效应 晶体管的生产采用飞兆半导体专有的，高 细胞密度，DMOS技术。这非常高密度 特别是针对减少通态过程 阻力。该设备已被特别设计 作为替代低电压应用 双极数字晶体管和小信号MOSFET。 ?低栅极电荷（典型值1.64 NC） ?非常低的水平栅极驱动要求可直接 操作3V电路（VGS（TH）<1.5V）。 ?门源齐纳二极管ESD坚固 （>6kV人体模型）。 ?紧凑型工业标准SC70-6表面贴装封装 |
| 技术文档PDF下载 |
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相关型号列表 |
| 型号 |
标记/丝印/代码 |
厂家 |
批号 |
封装 |
数量 |
描述 |
详细资料 |
| FDG313N |
13 |
FAIRCHILD |
05+NOPN108K |
SOT-363/SC70-6/TSSOP6/SC-88 |
384200 |
场效应管FET-MOSFET-N沟道MOSFET N-Channel |
查看 |
| FDG313N |
13 |
FAIRCHILD |
06nopb |
SOT-363/SC70-6/TSSOP6/SC-88 |
6000 |
场效应管FET-MOSFET-N沟道MOSFET N-Channel |
查看 |
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