FDG6316P 16 的参数 |
| 最大源漏极电压Vds
Drain-Source Voltage |
-12V |
| 最大栅源极电压Vgs(±)
Gate-Source Voltage |
-8V |
| 最大漏极电流Id
Drain Current |
-700mA/0.7A |
| 源漏极导通电阻Rds
Drain-Source On-State Resistance |
650m?@ VGS = -1.8V, ID = -0.4A |
| 开启电压Vgs（th）
Gate-Source Threshold Voltage |
-0.4~-1.5V |
| 耗散功率Pd
Power Dissipation |
300mW/0.3W |
| Description & Applications |
P-Channel 1.8V Specified Power Trench MOSFET General Description This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage Power Trench process. It has been optimized for battery power management applications. Applications ? Battery management ? Load switch Features ? Low gate charge ? High performance trench technology for extremely low RDS(ON) ? Compact industry standard SC70-6 surface mount package |
| 描述与应用 |
P沟道1.8V额定功率沟道MOSFET 概述 此P沟道MOSFET的1.8V指定使用飞兆半导体先进的低电压功率沟槽过程。它已被优化的电池电源管理应用。 应用 ?电池管理 ?负荷开关 特点 ?低栅极电荷 ?高性能沟道技术极低的RDS（ON） ?紧凑型工业标准SC70-6表面贴装封装 |
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