FDG6335N 35 的参数 |
| 最大源漏极电压Vds
Drain-Source Voltage |
20V |
| 最大栅源极电压Vgs(±)
Gate-Source Voltage |
12V |
| 最大漏极电流Id
Drain Current |
700mA/0.7A |
| 源漏极导通电阻Rds
Drain-Source On-State Resistance |
400m?@ VGS = 2.5V, ID =600mA |
| 开启电压Vgs（th）
Gate-Source Threshold Voltage |
0.6~1.5V |
| 耗散功率Pd
Power Dissipation |
300mW/0.3W |
| Description & Applications |
20V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized use in small switching regulators, providing an extremely low RDS(ON) and gate charge (QG) in a small package. Applications · DC/DC converter · Power management · Loadswitch Features · Low gate charge · High performance trench technology for extremely low RDS(ON) · Compact industry standard SC70-6 surface mount package |
| 描述与应用 |
20V N-沟道PowerTrench MOSFET 概述 此N沟道MOSFET已专门设计，以提高整体效率的DC / DC转换器采用同步或传统开关PWM控制器。它已被优化使用小开关稳压器，在一个小型封装提供极低的RDS（ON）和栅极电荷（QG）。 应用 ·DC/ DC转换器 ·电源管理 ·负载开关 特点 ·低栅极电荷 ·高性能沟槽技术非常低的RDS（ON） ·紧凑型工业标准SC70-6表面贴装封装 |
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