FP216-TL 216 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
120V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
100V |
| 集电极连续输出电流IC
Collector Current(IC) |
1A |
| 截止频率fT
Transtion Frequency(fT) |
120MHz |
| 直流电流增益hFE
DC Current Gain(hFE) |
140~400 |
| 管压降VCE（sat）
Collector-Emitter Saturation Voltage |
100mV |
| 耗散功率Pc
Power Dissipation |
1100mW |
| Description & Applications |
Features ? NPN Epitaxial Planar Silicon Transistor ? LCD Backlight Drive Applications ? Composite type with 2 transistors contained in the PCP5 package currently in use, improving the mounting efficiency greatly. ? The FP216 is composed of two chips, each being equivalent to the 2SC3646, placed in one package. |
| 描述与应用 |
特点 ?NPN平面外延硅晶体管 ?LCD背光驱动应用 ?复合型与包含在PCP5包装目前正在使用的2个晶体管，大大提高安装效率。 ?FP216是由两个芯片组成，每个被相当于2SC3646，放置在一个包装。 |
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