FX506 506 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
60V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
50V |
| 集电极连续输出电流IC
Collector Current(IC) |
5A |
| 截止频率fT
Transtion Frequency(fT) |
180MHz |
| 直流电流增益hFE
DC Current Gain(hFE) |
140~400 |
| 管压降VCE（sat）
Collector-Emitter Saturation Voltage |
220mV |
| 耗散功率Pc
Power Dissipation |
2000mW |
| Description & Applications |
Features ? NPN Epitaxial Planar Silicon Transistor ? Composite type with 2 PNP transistors contained in one package, facilitating high-density mounting. ? The FX506 houses two chips, each being equivalent to the 2SD1803, in one package. ? Matched pair characteristics. ? High-Current Switching Applications |
| 描述与应用 |
特点 ?NPN平面外延硅晶体管 ?在一个封装中包含2个PNP晶体管，促进高密度安装复合型。 ?FX506的房子，每个被相当于两个芯片2SD1803，在一个包装。 ?配对特性。 ?高电流开关应用 |
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