FZT956TA FZT956 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
-220V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
-200V |
| 集电极连续输出电流IC
Collector Current(IC) |
-2A |
| 截止频率fT
Transtion Frequency(fT) |
110MHz |
| 直流电流增益hFE
DC Current Gain(hFE) |
100~300 |
| 管压降VCE（sat）
Collector-Emitter SaturationVoltage |
-370mV/-0.37V |
| 耗散功率Pc
PoWer Dissipation |
3W |
| Description & Applications |
PNP SILICON PLANAR HIGH CURRENT TRANSISTORS FEATURES 4 Amps continuous current , up to 15 Amps peak current Very low saturation voltages Excellent gain characteristics specified up to 10 Amps COMPLEMENTARY TYPES FZT855 |
| 描述与应用 |
PNP硅平面高电流晶体管 特点 4安培连续电流高达15安培的峰值电流 极低的饱和电压 出色的增益特性可达10安培 互补类型FZT855 |
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