GA1L4M L31 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
60V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
50V |
| 集电极连续输出电流IC
Collector Current(IC) |
100mA/0.1A |
| 基极输入电阻R1
Input Resistance(R1) |
47KΩ/Ohm |
| 基极-发射极输入电阻R2
Base-Emitter Resistance(R2) |
47KΩ/Ohm |
| 电阻比(R1/R2)
Resistance Ratio |
1 |
| 直流电流增益hFE
DC Current Gain(hFE) |
85-640 |
| 截止频率fT
Transtion Frequency(fT) |
|
| 耗散功率Pc
Power Dissipation |
0.15W/150mW |
| Description & Applications |
Features Medium speed switching resistor built-in TYPE NPN transistor Resistors built-in TYPE Comlementary to GN1L4M |
| 描述与应用 |
特性 中速开关电阻内置型NPN晶体管 电阻器内置型 对管是 GN1L4M |
| 技术文档PDF下载 |
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