HSMS-282B-TR1 CO 的参数 |
| 反向电压Vr
Reverse Voltage |
15V |
| 平均整流电流Io
AVerage Rectified Current |
10mA |
| 最大正向压降VF
Forward Voltage(Vf) |
340mV/0.34V |
| 最大耗散功率Pd
Power dissipation |
|
| Description & Applications |
? Low FIT (Failure in Time) Rate* ? HSMS-282K Grounded Center Leads Provide up to 10 dB Higher Isolation ? Matched Diodes for Consistent Performance ? Better Thermal Conductivity for Higher Power Dissipation ? These Schottky diodes are specifically designed for both analog and digital applications。 ? HSMS-282x series of diodes is the best all-around choice for most applications, featuring low series resistance, low forward voltage at all current levels and good RF characteristics. ? Surface Mount RF Schottky Barrier Diodes |
| 描述与应用 |
?低FIT（故障时间）率* ?HSMS-282K接地中心信息提供多达高出10 dB的隔离 ?一致的性能匹配二极管 ?更好的导热性更高的功率耗散 ?这些肖特基二极管是专门设计用于模拟和数字应用。 ?二极管HSMS-282X系列全能是最好的选择，对于大多数应用，具有低串联电阻，在目前所有级别的低正向电压和良好的RF的特点。 ?表面贴装射频肖特基二极管 |
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