HSMS-2852 P2 的参数 |
| 反向电压Vr
Reverse Voltage |
|
| 平均整流电流Io
AVerage Rectified Current |
1mA |
| 最大正向压降VF
Forward Voltage(Vf) |
250mV/0.25V |
| 最大耗散功率Pd
Power dissipation |
|
| Description & Applications |
Surface Mount Zero Bias Schottky Detector Diodes ? High Detection Sensitivity: up to 50 mV/μW at 915 MHz ? Low Flicker Noise:-162 dBV/Hz at 100 Hz ? Low FIT (Failure in Time)Rate* ? Tape and Reel Options ? Matched Diodes for Consistent Performance ? Better ThermalConductivity for Higher Power Dissipation ? Agilent’s HSMS-285x family of zero bias Schottky detector diodes has been designed and optimized for use in small signal (Pin <-20 dBm) applications at frequencies below 1.5 GHz. Theyare ideal for RF/ID and RF Tag applications where primary (DC bias) power is not availabl |
| 描述与应用 |
表面贴装零偏置肖特基检波二极管 ?检测灵敏度高：到50 mV/μW在915 MHz ?低噪音闪烁：-162 DBV/频率为100Hz ?低FIT（故障时间）率* ?磁带和卷轴选项 ?一致的性能匹配二极管 ?更好的导热系数更高的功率耗散 ?安捷伦的零偏置肖特基检波二极管HSMS-285X系列的设计和优化，在小信号（引脚<-20 dBm的）应用，使用频率1.5 GHz以下。他们是理想的RF/ ID和射频。 |
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