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IRFR5410TRR FR5410 的参数 |
| 最大源漏极电压Vds
Drain-Source Voltage |
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| 最大栅源极电压Vgs(±)
Gate-Source Voltage |
20V |
| 最大漏极电流Id
Drain Current |
1.3A |
| 源漏极导通电阻ΩRds
DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance |
0.205Ω/Ohm @7.8A,10V |
| 开启电压Vgs（th）
Gate-Source Threshold Voltage |
-2.0--4.0 |
| 耗散功率Pd
Power Dissipation |
6W |
| Description & Applications |
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D-Pak is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications. ltra Low On-Resistance P-Channel Surface Mount (IRFR5410) Straight Lead (IRFU5410) dvanced Process Technology Fast Switching Fully Avalanche Rated |
| 描述与应用 |
第五代HEXFETs国际整流器 利用先进的加工技术，以实现极低的导通电阻每硅片面积。 这样做的好处，加上开关速度快和坚固耐用的设备的设计，HEXFET功率MOSFET以及 见长，为设计师提供了一个非常有效和可靠的设备在多种应用中使用。 D-PAK是专为表面安装使用蒸汽 相，红外线，或波峰焊技术。直引线型（IRFU系列）是通孔安装 的应用程序。有可能在典型的表面贴装应用的功耗水平，直至到1.5瓦。 “LTRA低导通电阻 P沟道 表面贴装（IRFR5410 直铅IRFU5410） 先进适用的工艺技术 快速切换 |
| 技术文档PDF下载 |
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相关型号列表 |
| 型号 |
标记/丝印/代码 |
厂家 |
批号 |
封装 |
数量 |
描述 |
详细资料 |
| IRFR5410TRR |
FR5410 |
IR |
04+ |
TO-252/D-PAK |
200 |
场效应管FET-MOSFET-N沟道MOSFET N-Channel |
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