MRF1047T1 WB 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
12V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
5V |
| 集电极连续输出电流IC
Collector Current(IC) |
45mA |
| 截止频率fT
Transtion Frequency(fT) |
12Ghz |
| 直流电流增益hFE
DC Current Gain(hFE) |
100~300 |
| 管压降VCE（sat）
Collector-Emitter Saturation Voltage |
|
| 耗散功率Pc
Power Dissipation |
|
| Description & Applications |
? NPN Silicon low noise, RF TRANSISTOR ? Low Noise Figure, NFmin = 1.0 dB (Typ) @1.0 GHz, 3.0 V and 3.0 mA ? High Current Gain–Bandwidth Product, fτ = 12 GHz, 3.0 V @ 15 mA ? Maximum Stable Gain, 17 dB @ 1.0 GHz, 3.0 V and 10 mA ? Output Third Order Intercept, OIP3 = 26 dBm @ 1.0 GHz 3.0 V and 15 mA ? Fully Ion–Implanted with Gold Metallization and Nitride Passivation |
| 描述与应用 |
?NPN硅低噪声，射频晶体管 ?低噪声系数的NFmin= 1.0分贝（典型值）的1.0 GHz，3.0 V和3.0 MA ?高电流增益带宽积，Fτ?=12 GHz时，3.0 V@15毫安 ?最大稳定增益，17 dB@1.0主频，3.0 V和10毫安 ?输出三阶截，OIP3=26 dBm@1.0 GHz的3.0 V和15毫安 ?全镀金氮化硅钝化离子注入 |
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