MSG36D42Z1AL 6E 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
9V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
6V |
| 集电极连续输出电流IC
Collector Current(IC) |
100mA/60mA |
| 截止频率fT
Transtion Frequency(fT) |
14000MHz/19000MHz |
| 直流电流增益hFE
DC Current Gain(hFE) |
100~220 |
| 管压降VCE（sat）
Collector-Emitter Saturation Voltage |
|
| 耗散功率Pc
Power Dissipation |
125mW |
| Description & Applications |
Features ? Compatible between high breakdown voltage and high cutoff frequency Compatible between high breakdown voltage and high cutoff frequency ? Low-noise, high-gain ampli? cation Low-noise, high-gain ampli?cation ? Two elements incorporated into one package (Each transistor is separated) Two elements incorporated into one package (Each transistor is separated) ? SSSMini type package, reduction of the mounting area and assembly cost ? For low-noise RF ampli? er |
| 描述与应用 |
特点 ?之间的高击穿电压和高截止频率高击穿电压和高截止频率之间兼容兼容 ?低噪声，高增益扩增阳离子低噪声，高增益放大 ?两个要素纳入一包（每个晶体管分隔）两个要素纳入一个包（每个晶体管分离） ?SSSMini型包装，减少安装面积和装配成本 ?对于低噪声射频放大器 |
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