MT6L11FS YO 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
13V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
6V |
| 集电极连续输出电流IC
Collector Current(IC) |
40mA |
| 截止频率fT
Transtion Frequency(fT) |
6000MHz |
| 直流电流增益hFE
DC Current Gain(hFE) |
100~160 |
| 管压降VCE（sat）
Collector-Emitter Saturation Voltage |
|
| 耗散功率Pc
Power Dissipation |
100mW |
| Description & Applications |
Features ? TOSHIBA Transistor Silicon NPN Epitaxial Planar Type ? Two devices are incorporated in a fine-pitch, small-mold package (6 pins): fS6. ? Superior noise characteristics ? Superior performance in buffer and oscillator applications. ? VHF~UHF Band Low-Noise Amplifier Applications |
| 描述与应用 |
特点 ?东芝晶体管NPN硅外延平面型 ?两个设备都成立于细间距，小型模具包（6针）：FS6。 ?高级噪声特性 ?缓冲和振荡器的应用中的卓越性能。 ?VHF?UHF频段低噪声放大器应用 |
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