NE32584C-T1 D 的参数 |
| 最大源漏极电压Vds
Drain-Source Voltage |
4V |
| 栅源极击穿电压V(BR)GS
Gate-Source Voltage |
-3V |
| 漏极电流(Vgs=0V)IDSS
Drain Current |
20mA-90mA |
| 关断电压Vgs(off)
Gate-Source Cut-off Voltage |
-0.2V -- -2.0V |
| 耗散功率Pd
Power Dissipation |
165mW/0.165W |
| Description & Applications |
HETERO JUNCTION FIELD EFFECT TRANSISTOR C to Ku BAND SUPER LOW NOISE AMPLIFIER Super Low Noise Figure & High Associated Gain |
| 描述与应用 |
异质结型场效应晶体管 C到Ku波段超低噪声放大器 超级低噪声系数和高相关的收益 |
| 技术文档PDF下载 |
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