NTD40N03RT4 T40N03 的参数 |
| 最大源漏极电压Vds
Drain-Source Voltage |
25V |
| 最大栅源极电压Vgs(±)
Gate-Source Voltage |
20V |
| 最大漏极电流Id
Drain Current |
3.8A |
| 源漏极导通电阻ΩRds
DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance |
0.045Ω/Ohm @6A,10V |
| 开启电压Vgs（th）
Gate-Source Threshold Voltage |
1.0-2.0V |
| 耗散功率Pd
Power Dissipation |
22.3W |
| Description & Applications |
Power MOSFET 45 Amps, 25 Volts N?Channel DPAK N-Channel DPAK Features ? Planar HD3e Process for Fast Switching Performance ? Low RDS(on) to Minimize Conduction Loss ? Low Ciss to Minimize Driver Loss ? Low Gate Charge ? Optimized for High Side Switching Requirements in High-Ef ficiency DC-DC Converters |
| 描述与应用 |
?的平面HD3e过程快速开关性能 ?低的RDS（on） 减少传导损耗 ?低西塞 最小化驱动器损失 ?低栅极电荷 ?优化高侧开关的要求 高效率的DC-DC转换器 |
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