NUS2401SNT1G 50 的参数 |
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
60V/60V/-60V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
50V/50V/-50V |
集电极连续输出电流IC
Collector Current(IC) |
200mA/200mA/-200mA |
Q1基极输入电阻R1
Input Resistance(R1) |
10KΩ/Ohm |
Q1基极-发射极输入电阻R2
Base-Emitter Resistance(R2) |
10KΩ/Ohm |
Q1电阻比(R1/R2)
Q1 Resistance Ratio |
1 |
Q2基极输入电阻R1
Input Resistance(R1) |
10KΩ/Ohm |
Q2基极-发射极输入电阻R2
Base-Emitter Resistance(R2) |
10KΩ/Ohm |
Q2电阻比(R1/R2)
Q2 Resistance Ratio |
1 |
直流电流增益hFE
DC Current Gain(hFE) |
350/350/60 |
截止频率fT
Transtion Frequency(fT) |
|
耗散功率Pc
Power Dissipation |
350mW/0.35W |
Description & Applications |
Features ?Integrated PNP/NPN Digital Transistors Array ?Integrated Design ?Reduces Board Space and Components Count ?Simplifies Circuitry Design ?Offered in Surface Mount Package Technology (SC?74) ?Available in 3000 Unit Tape and Reel ?Pb?Free Package is Available |
描述与应用 |
特点 ?集成PNP/ NPN数字晶体管阵列 ?集成的设计 ?缩小板级空间和元件数量 ?简化电路设计 ?提供表面贴装技术(SC-74) ?可在3000单位带和卷轴 ?无铅包装是可用 |
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