PBSS4140DPN M2 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
40V/-40V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
40V/-40V |
| 集电极连续输出电流IC
Collector Current(IC) |
1A/-1A |
| 截止频率fT
Transtion Frequency(fT) |
150MHz |
| 直流电流增益hFE
DC Current Gain(hFE) |
300~900 |
| 管压降VCE（sat）
Collector-Emitter Saturation Voltage |
250mV-250mV |
| 耗散功率Pc
Power Dissipation |
600mW |
| Description & Applications |
Features ? 40 V low VCEsat NPN/PNP transistor ? 600 mW total power dissipation ? Low collector-emitter saturation voltage ? High current capability ? Improved device reliability due to reduced heat generation ? Replaces two SOT23 packaged low VCEsat transistors on same PCB area ? Reduces required PCB area ? Reduced pick and place costs. APPLICATIONS ? General purpose switching and muting ? LCD backlighting ? Supply line switching circuits ? Battery driven equipment (mobile phones, video cameras and hand-held devices). |
| 描述与应用 |
特点 ?40 V低VCEsat NPN/ PNP晶体管 ?600 mW的总功耗 ?低集电极 - 发射极饱和电压 ?高电流能力 ?提高设备的可靠性，由于产生的热量减少 ?替换两个SOT23包装相同的PCB面积上的晶体管的低VCEsat ?减少所需PCB面积 ?减少取放成本。 应用 ?通用开关和静音 ?LCD背光 ?供电线路开关电路 ?电池驱动设备（手机，摄像机和手持设备）。 |
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