PEMZ1 FZ 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
50V/-50V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
40V/-40V |
| 集电极连续输出电流IC
Collector Current(IC) |
100mA/-100mA |
| 截止频率fT
Transtion Frequency(fT) |
100MHz |
| 直流电流增益hFE
DC Current Gain(hFE) |
120 |
| 管压降VCE（sat）
Collector-Emitter Saturation Voltage |
200mV/-200mV |
| 耗散功率Pc
Power Dissipation |
300mW |
| Description & Applications |
Features ? NPN/PNP general purpose transistors ? 300 mW total power dissipation ? Very small 1.6 × 1.2 mm ultra thin package ? Self alignment during soldering due to straight leads ? Replaces two SC-75/SC-89 packaged transistors on same PCB area ? Reduced required PCB area ? Reduced pick and place costs. APPLICATIONS ? General purpose switching and amplification ? Complementary MOSFET driver for switch mode power supply ? Complementary driver for audio amplifiers. |
| 描述与应用 |
特点 ?NPN / PNP通用晶体管 ?300 mW的总功耗 ?非常小的1.6×1.2毫米的超薄封装 ?自对准直引线在焊接过程中，由于 ?替换两个SC-75/SC-89包装相同的PCB面积上的晶体管 ?减少所需PCB面积 ?减少取放成本。 应用 ?通用开关和放大 ?互补开关模式电源MOSFET驱动器 ?互补驱动器，音频放大器。 |
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