PMBF4392 P6K 的参数 |
| 最大源漏极电压Vds
Drain-Source Voltage |
40v |
| 栅源极击穿电压V(BR)GS
Gate-Source Voltage |
-40v |
| 漏极电流(Vgs=0V)IDSS
Drain Current |
25~75ma |
| 关断电压Vgs(off)
Gate-Source Cut-off Voltage |
-2~-5v |
| 耗散功率Pd
Power Dissipation |
250mW/0.25W |
| Description & Applications |
?N-channel DESCRIPTION Symmetrical silicon n-channel depletion type junction field-effect transistors on a plastic microminiature envelope intended for application in thick and thin-film circuits. The transistors are intended for low-power chopper or switching applications in industry. |
| 描述与应用 |
?N沟道 说明 对称硅n沟道 耗尽型结型场效应 塑料超小型晶体管 信封用于应用 厚薄膜电路。该 晶体管用于低功耗 斩波器或开关应用 业。 |
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