RN46A1 11 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
-50V/50V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
-50V/50V |
| 集电极连续输出电流IC
Collector Current(IC) |
-100mA/100mA |
| Q1基极输入电阻R1
Input Resistance(R1) |
22KΩ/Ohm |
| Q1基极-发射极输入电阻R2
Base-Emitter Resistance(R2) |
22KΩ/Ohm |
| Q1电阻比(R1/R2)
Q1 Resistance Ratio |
1 |
| Q2基极输入电阻R1
Input Resistance(R1) |
10KΩ/Ohm |
| Q2基极-发射极输入电阻R2
Base-Emitter Resistance(R2) |
10KΩ/Ohm |
| Q2电阻比(R1/R2)
Q2 Resistance Ratio |
1 |
| 直流电流增益hFE
DC Current Gain(hFE) |
70/50 |
| 截止频率fT
Transtion Frequency(fT) |
200MHz/250MHz |
| 耗散功率Pc
Power Dissipation |
300mW/0.3W |
| Description & Applications |
Features ?TOSHIBA Transistor Silicon PNP·NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) ?Two devices are incorporated into an Super-Mini (6 pin) package. ?Incorporating a bias resistor into a transistor reduces parts count.Reducing the parts count enable the manufacture of ever more compact equipment and save assembly cost. Applications ?Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. |
| 描述与应用 |
特点 ?东芝硅PNP晶体管NPN外延型（PCT进程）（偏置电阻晶体管） ?两个设备都纳入一个超小型封装（6针）。 ?将偏置电阻晶体管，减少了部件数量。减少零件数，使制造比以往更紧凑的设备和装配成本。 应用 ?开关，逆变电路，接口电路和驱动器电路应用。 |
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