SP0610TE-6327 SSF 的参数 |
最大源漏极电压Vds
Drain-Source Voltage |
-100V |
最大栅源极电压Vgs(±)
Gate-Source Voltage |
20V |
最大漏极电流Id
Drain Current |
-1.7A |
源漏极导通电阻Rds
Drain-Source On-State
Resistance |
0.16Ω @1.7A,10V |
开启电压Vgs(th)
Gate-Source Threshold Voltage |
2.1-4V |
耗散功率Pd
Power Dissipation |
1.8W |
Description & Applications |
SIPMOS SMALL-SIGNAL TRANSISTOR N CHANNEL ENHANCEMENT MODE AVALANCHE RATED VGH(th)=2.1-4.0V |
描述与应用 |
SIPMOS小信号晶体管 N沟道 增强模式 额定雪崩 VGH(th)=2.1-4.0V |
技术文档PDF下载 |
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