SST4119 T9 的参数 |
| 最大源漏极电压Vds
Drain-Source Voltage |
40v |
| 栅源极击穿电压V(BR)GS
Gate-Source Voltage |
-40v |
| 漏极电流(Vgs=0V)IDSS
Drain Current |
0.2~0.6ma |
| 关断电压Vgs(off)
Gate-Source Cut-off Voltage |
-2~-6v |
| 耗散功率Pd
Power Dissipation |
350mW/0.35W |
| Description & Applications |
?N–Channel JFETs ?Ultra-Low Leakage: 0.2 pA ?Very Low Current/Voltage Operation ?Ultrahigh Input Impedance ?Low Noise |
| 描述与应用 |
?N沟道JFETs ?超低漏？？0.2 pA的 ?非常低的电流/电压操作 ?超高输入阻抗 ?低噪声 |
| 技术文档PDF下载 |
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