TN2106K1 N1LY 的参数 |
最大源漏极电压Vds
Drain-Source Voltage |
|
最大栅源极电压Vgs(±)
Gate-Source Voltage |
20V |
最大漏极电流Id
Drain Current |
280mA/0.28A |
源漏极导通电阻ΩRds
DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance |
0.4Ω/Ohm @500mA,25V |
开启电压Vgs(th)
Gate-Source Threshold Voltage |
0.6-2.0V |
耗散功率Pd
Power Dissipation |
360mW/0.36W |
Description & Applications |
Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds Excellent thermal stability Integral Source-Drain diode High input impedance and high gain Complementary N- and P-channel devices |
描述与应用 |
无二次击穿 低功率驱动器的要求 易于并联 低连续供墨系统 和快速开关速度 优良的热稳定性 积分源漏二极管 高输入阻抗,高增益 互补N和P沟道器件 |
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