UMY1 Y1 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
-60V/60V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
-50V/50V |
| 集电极连续输出电流IC
Collector Current(IC) |
-150mA/150mA |
| 截止频率fT
Transtion Frequency(fT) |
140MHz/180MHz |
| 直流电流增益hFE
DC Current Gain(hFE) |
120~560 |
| 管压降VCE（sat）
Collector-Emitter Saturation Voltage |
-500mA/400mA |
| 耗散功率Pc
Power Dissipation |
150mW |
| Description & Applications |
Features ?Emitter common (dual transistors) ?Includes a 2SA1037AK and a 2SC2412K transistor in a EMT or UMT or SMT package. ?PNP and NPN transistors have common emitters. ?Mounting cost and area can be cut in half. |
| 描述与应用 |
特点 ?发射极普通的（双晶体管） ?在EMT或UMT或SMT封装包括一个2SA1037AK的2SC2412K晶体管。 ?PNP和NPN晶体管有共同的发射器。 ?安装成本和面积可减少一半。 |
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