UPA803T T73 的参数 |
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
20V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
12V |
集电极连续输出电流IC
Collector Current(IC) |
30mA |
截止频率fT
Transtion Frequency(fT) |
5500MHz |
直流电流增益hFE
DC Current Gain(hFE) |
60~200 |
管压降VCE(sat)
Collector-Emitter Saturation Voltage |
500mV |
耗散功率Pc
Power Dissipation |
160mW |
Description & Applications |
Features ? SILICON TRANSISTOR ? High fT fT = 5.5 GHz TYP. (@VCE = 5 V, IC = 5 mA, f = 1 GHz) ? Small Collector Capacitance Cob = 0.7 pF TYP. (@VCB = 5 V, IE = 0, f = 1 MHz) ? A Surface Mounting Package Adopted ? Built-in 2 Transistors (2 × 2SC4570) ? NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ELEMENTS) MINI MOLD |
描述与应用 |
特点 ?硅晶体管 ?高FT FT=5.5 GHz的TYP。 (@ VCE= 5 V,IC =5毫安,F =1千兆赫) ?集电极小电容 科夫=0.7 pF的TYP。 (VCB=5 V,IE=0时,F =1兆赫) ?一个采用表面贴装封装, ?内置2晶体管(2×2SC4570) ?NPN硅外延晶体管(带内置2个元素)MINI模具 |
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